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 JMnic
Product Specification
Silicon PNP Power Transistors
2SA714
DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For power amplifier and power switching applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta=ae )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae Open emitter Open base Open collector CONDITIONS VALUE -150 -150 -6 -7 -11 60 150 -55~150 ae ae UNIT V V V A A W
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2SA714
SYMBOL
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ;IB=0
-150
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ;IE=0
-150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-6
V
VCEsat
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-5A; IB=-0.5A
-2.5
V
ICBO
Collector cut-off current
VCB=-150V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-0.1
mA
hFE
DC current gain
IC=-1A ; VCE=-5V
60
320
fT
Transition frequency
IC=-1A ; VCE=-5V
8
MHz
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA714
Fig.2 outline dimensions (unindicated tolerance:A
0.1mm)
3


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